| PART |
Description |
Maker |
| NESG270034-T1 NESG270034-AZ NESG270034-T1-AZ NESG2 |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
|
CEL[California Eastern Labs]
|
| 2SC5338-15 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC4703-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
California Eastern Labs
|
| NESG270034-AZ NESG270034-T1-AZ |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) npn型硅锗射频晶体管输出功率放大介质 - Pin电源MINIMOLD34 PKG）的
|
California Eastern Laboratories, Inc.
|
| UPA901TU |
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
|
CEL
|
| 2SC5801 2SC5801-T3 C5801 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|
NEC[NEC]
NEC Corp.
|
| UPA814TC UPA814TC-T1 NECCORP.-PA814TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| UPA814 UPA814TC UPA814TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| UPA826TC UPA826TC-T1 |
RAC15-TB(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 15V; Features: Compact AC-DC Power
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
